Experimental Verification of Lumped Element Circuit Synthesis Method for Class-F Microwave Amplifier Using InGaP/GaAs HBT

Microwave Class-F InGaP/GaAs HBT Power Amplifier Considering up to 7th-Order Higher Harmonic Frequencies

f0 Ideal Abstract The first realization of a class-F InGaP/GaAs HBT amplifier considering up to 7th-order higher harmonic frequencies, operating at 1.9 GHz, is described. For a class-F amplifier design in microwave frequency ranges, not only increasing the number of treated harmonic frequencies, but also decreasing quantities of intrinsic and parasitic elements in a transistor is important. Mea...

Predictive Modeling of InGaP/GaAs HBT Noise Parameters from DC and S- Parameter Data for Wireless Power Amplifier Design

Noise characterization of bipolar transistors is typically a lengthy and costly process. As a result, routine monitoring of microwave noise does not generally occur for HBT technologies or products. In contrast, vast quantities of parametric DC data and S-parameter data are measured during the regular course of technology development and production. In work by Voinigescu et al [1], DC and S-par...

InGaP/GaAs HBT MMIC Amplifier with Active Balun for Ultra-Wideband Self-Complementary Antenna

Single-chip Dual-band WLA using InGaP/GaA

A single-chip dual-band power amplifier monolithic microwave integrated circuit (MMIC) operating at 3.5V single supply has been developed for both WLAN 2.4GHz and 5.2GHz with IEEE 802.11b/g/a standards applications. The MMIC utilizes the process of WINs Corp. with an InGaP/GaAs HBT process. The dual-band power amplifier constructed based on the design of adaptive RF bias choke circuits and prop...

Development of High Breakdown Voltage InGaP/GaAs DHBTs

In this paper, we report the development of a high breakdown voltage InGaP/GaAs HBT process for low-to-mid power and high-voltage power amplifier operation. To achieve the high-breakdown InGaP HBT, two different collector designs and collector-etch processes were investigated. The first device process approach uses a thick GaAs collector with low n doping. The process challenges and considerati...